Subventions et des contributions :

Subvention ou bourse octroyée s'appliquant à plus d'un exercice financier. (2017-2018 à 2018-2019)

CdZnTe is an emerging semiconductor alloy used in high energy x-ray detectors for medical diagnostics andx000D
security applications. The performance of the detectors depends on controlling the density of electronicallyx000D
active defects which trap charge generated by absorbed x-rays and act as recombination centres. The density ofx000D
defects is affected by the crystal growth process and post growth processing of the crystals in ways that are stillx000D
poorly understood. In order to improve the quality of the detector material and to reduce the cost ofx000D
manufacturing detectors it would be desirable to have a fast contactless method for quantifying the density ofx000D
defects and their chemical origin as well as for spatial mapping defects. Variable temperaturex000D
photoluminescence (PL) is a contactless technique that can potentially satisfy these requirements. PL isx000D
sensitive to low densities of defects, can probe small areas and can provide chemical specificity through thex000D
emission spectrum. In this project we will explore the applicability of PL for the routine assessment of thex000D
electronic properties of device quality CdZnTe.