Subventions et des contributions :

Subvention ou bourse octroyée s'appliquant à plus d'un exercice financier. (2017-2018 à 2022-2023)

The proposed program shall interface two strategically important research areas – quantum materials and quantum information. By building novel heterostructure devices, such as transparent capacitors, p-i-n junctions, and micropillar cavities, consisting of two-dimensional (2D) quantum materials (boron nitride, graphene, tungsten diselenide, etc.), their unique properties can be exploited to realize on-chip, tunable single photon sources for quantum information. Such sources not only form integral components of many quantum communication and information processing architectures involving photons (e.g., quantum key distribution, quantum repeaters, and linear optics quantum computing), they can also be used to resolve features beyond the diffraction limit, finding applications in quantum imaging and lithography. Their development, especially in scalable platforms, is thus necessary to push forward a range of quantum technologies towards widespread commercial usage.

In particular, the program will exploit a class of optically active defects, so far found in boron nitride and tungsten diselenide, that emit single photons when excited. Photons, which can exist in a superposition of quantum states, can be used to encode quantum information. Since they travel at the speed of light and interact weakly with the environment, they can further carry this information over long distances. As a result, sources that produce “on-demand,” single photons of high purity (multiphoton generation suppressed) are a prized commodity for quantum information technology, especially if the emission can be controlled electrically, as well as generated and collected with high efficiency. 2D materials offer a number of advantages over other single photon sources under development. The embedded defects have been shown to have naturally high purity and emission efficiency. The layered nature of the host further allows convenient integration with devices and heterostructures both to electrically manipulate the defects as well as to capture emitted photons. The materials can also be grown as thin films over large areas, allowing the benefit of future scalability.

By exploiting their unique properties, the following achievements will be demonstrated:
• the development of tunable single photon sources from defects in 2D materials;
• experiments using these sources to demonstrate high single photon purity, as well as generation and collection efficiencies;
• large-scale device integration on silicon wafers.