Subventions et des contributions :

Subvention ou bourse octroyée s'appliquant à plus d'un exercice financier (2017-2018 à 2018-2019).

Gallium Nitride (GaN) power semiconductor devices are promising solutions for increasing the efficiency andx000D
power density of power electronics systems. GaN Systems Inc is a world leading company that produce GaNx000D
high-electron-mobility transistor (HEMT) devices. GaN HEMTs have been applied in many low voltage andx000D
low power applications. For high power systems, the performances of GaN HEMTs have not been fullyx000D
evaluated. In this Engage project, researchers in University of Alberta will collaborate with GaN Systemsx000D
engineers to developing a 50kW GaN HEMT based multilevel converter prototype and study the performancesx000D
of the GaN devices experimentally using the prototype. The project includes circuit parameter design of thex000D
prototype, sensing and control scheme development considering the key challenges caused by high switchingx000D
frequency noises, and experimental study and analysis of the results.